0.18 μm BCD -High Voltage Gate (HVG) Process to address Advanced Display Drivers Roadmap

Abstract

This paper describes BCD-HVG8 (High Voltage Gate) process family, a technology optimized to address the small size display driver applications. 20/32/40V devices with thick gate oxide (Vgs max=25V) have been successfully integrated in a 0.18µm BCD platform. Thanks to its flexibility and modularity, the obtained process is suitable to cover the design requirements coming from all of the present different display realization techniques: passive Liquid Crystal Display (LCD), Thin Film Transistors (TFT) or Organic Light Emission Diodes (OLED).