Electrical characterization of HfO2 based resistive RAM devices having different bottom electrode metallizations

Abstract

HfO2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, having four different bottom electrode materials fabricated by CEA-LETI and ASM cooperation. The effects of bottom electrode metallization on Forming, switching and capacitive characteristics were studied and most efficient combinations were determined among these structures. It was observed that devices having atomic layer deposited (ALD) bottom electrode have some capacitive properties. Also TiN and TiWN bottom electrodes indicate promising switching characteristics and low operation voltages among others.