Increasing Microprocessor Speed by Massive Application of On-Die High-K MIM Decoupling Capacitors

H. Sánchez, B. Johnstone, Doug Roberts, Om Mandhana, B. Melnick, M. Celik, M. Baker, J. Hayden, B. Min, J. Edgerton, B. White
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引用次数: 19

Abstract

A 90nm SOI microprocessor with massive application of high-k MIM decoupling capacitor modules is proven to increase the maximum frequency of the processor by close to 10%. Simulations predict reduced power supply noise leading to improvements in Fmax by close to the equivalent of a transistor node increase. Simulations of applying MIM decoupling capacitors to high-speed I/O and PLL circuits show that they can further enhance performance and area requirements for these critical circuits in advanced technologies
大量应用片上高k值MIM去耦电容器提高微处理器速度
大量应用高k MIM去耦电容模块的90nm SOI微处理器被证明可以将处理器的最大频率提高近10%。模拟预测,电源噪声的降低将导致Fmax的改善,其效果接近于晶体管节点的增加。将MIM去耦电容器应用于高速I/O和锁相环电路的仿真表明,它们可以进一步提高先进技术中这些关键电路的性能和面积要求
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