Online Fault Detection and Diagnosis in RRAM

M. Fieback, Filip Bradaric, M. Taouil, S. Hamdioui
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Abstract

Resistive Random Access Memory (RRAM, or ReRAM) is a promising memory technology to replace Flash because of its low power consumption, high storage density, and simple integration in existing IC production processes. This has motivated many companies to invest in this technology. However, RRAM manufacturing introduces new failure mechanisms and faults that cause functional errors. These faults cannot all be detected by state-of-the-art test and diagnosis solutions, thus leading to slower product development and low-quality products. This paper introduces a design-for-test (DFT) based on a parallel-multi-reference read (PMRR) circuit that can detect all RRAM array faults. The PMRR circuit replaces the standard sense amplifier and compares the cell’s state to multiple references during one read operation. Thus, it can be used as a DFT scheme and a normal read circuit at once. This allows for speeding up production testing and the online detection of faults. Furthermore, the circuit is extendable so that more references can be compared, which is required for efficient diagnosis. Finally, the references can be adjusted to maximize the production yield. The circuit outperforms state-of-the-art solutions because it can detect all RRAM faults during diagnosis, production testing, and during its application in the field while minimizing yield loss.
RRAM中的在线故障检测与诊断
电阻式随机存取存储器(RRAM,简称ReRAM)具有功耗低、存储密度高、易于集成等优点,是一种有望取代闪存的存储器技术。这促使许多公司投资于这项技术。然而,RRAM制造引入了新的失效机制和导致功能错误的故障。这些故障无法通过最先进的测试和诊断解决方案全部检测到,从而导致产品开发速度减慢和产品质量降低。本文介绍了一种基于并行多参考读电路的测试设计(DFT)方法,该方法可以检测RRAM阵列的所有故障。PMRR电路取代了标准的感测放大器,并在一次读取操作期间将单元的状态与多个参考进行比较。因此,它可以同时用作DFT格式和普通读电路。这允许加快生产测试和在线检测故障。此外,电路具有可扩展性,因此可以比较更多的参考,这是有效诊断所必需的。最后,可以调整参考,以最大限度地提高生产收率。该电路优于最先进的解决方案,因为它可以在诊断、生产测试和现场应用过程中检测到所有RRAM故障,同时最大限度地减少产量损失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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