Nanowire Array Solar Cells

Abstract

The third-generation photovoltaic device based on nanowire (NW) array with radial p-n junctions is theoretically studied. We consider p-type vertical Si nanowire array regularly distributed in an n-type Si matrix with NWs radii varying from nano-scale to micro-scale. Theoretical investigations show that photovoltaic (PV) cell with radial p-n junction has some advantages compared to that with planar p-n junction as the distance required to collect minority carriers is decreased. The dependences of photovoltage, photocurrent, cell efficiency and open circuit voltage on nanowire array parameters are described.