Organic ferroelectric non-volatile memory transistors

Abstract

A non-volatile memory transistor based on an air-stable p-type polymer semiconductor (PDVT-10) and organic ferroelectric polymer (PVDF-TrFE) is developed. The solution-processed memory transistor, which can operate well in air, has extremely stable storage properties with a 100 V memory window when the gate voltage sweeps in the range of ± 80 V. The programming and erasing behavior of air-stable memory device are demonstrated. Although the retention behaviors and cyclic stability of the ferroelectric memory devices remain to be further improved and optimized, their capability of stable operation in air provides a certain application prospect.