Laser Annealed Ni(Ti) Silicides Formation

Y. Setiawan, P. Lee, K. Pey, X.C. Wang, G. Lim, F. L. Chow
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Abstract

Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni3Si2 was found to be the first silicide formed at 600degC and stable up to 900degC. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during rapid solidification
激光退火Ni(Ti)硅化物的形成
研究了RTA和LTA过程中Ti合金化对硅化镍形成的影响。在RTA退火样品中,发现Ni3Si2是在600℃时形成的第一个硅化物,并且稳定到900℃。另一方面,在高激光通量单脉冲LTA后,样品中发现了独特的三层微观结构。在快速凝固过程中,Ti迅速从合金熔体中分离出来,并在表面形成保护性的TiOx覆盖层
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