{"title":"A Cryogenic LC VCO Utilizing Cryogenic Models of Active Devices","authors":"Hüseyin Ozan Güleç, M. B. Yelten","doi":"10.1109/ICEEE2019.2019.00049","DOIUrl":null,"url":null,"abstract":"Upcoming advances in the space research demand a better understanding of the analog and radio frequency circuit behavior at very low temperatures. For this purpose, a LC cross-coupled voltage controlled oscillator in the S-band is designed for space communications as a case study using a commercial 0.18 µm CMOS Mixed-Mode/RF device technology. At 77 K, performance variations are observed with respect to the room temperature through the model extracted from transistor measurements that have been conducted using liquid nitrogen. One notable observation indicates that by cooling down to the cryogenic temperatures, the oscillator can fall into the \"waste of power\" region and therefore the phase noise of the circuit does not necessarily improve in the cryogenic operation regime. Even though there is a gap in the literature about the cryogenic behavior of passive devices, it is shown that the variations on the varactor threshold value and the quiescent node voltages of the circuit can notably shift the needed control voltages. Moreover, a voltage controlled oscillator is designed, which ensures practical operation both at 300 K and 77 K, thereby demonstrating how the tuning range and phase noise performance of the oscillator changes at different temperatures.","PeriodicalId":407725,"journal":{"name":"2019 6th International Conference on Electrical and Electronics Engineering (ICEEE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 6th International Conference on Electrical and Electronics Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE2019.2019.00049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Upcoming advances in the space research demand a better understanding of the analog and radio frequency circuit behavior at very low temperatures. For this purpose, a LC cross-coupled voltage controlled oscillator in the S-band is designed for space communications as a case study using a commercial 0.18 µm CMOS Mixed-Mode/RF device technology. At 77 K, performance variations are observed with respect to the room temperature through the model extracted from transistor measurements that have been conducted using liquid nitrogen. One notable observation indicates that by cooling down to the cryogenic temperatures, the oscillator can fall into the "waste of power" region and therefore the phase noise of the circuit does not necessarily improve in the cryogenic operation regime. Even though there is a gap in the literature about the cryogenic behavior of passive devices, it is shown that the variations on the varactor threshold value and the quiescent node voltages of the circuit can notably shift the needed control voltages. Moreover, a voltage controlled oscillator is designed, which ensures practical operation both at 300 K and 77 K, thereby demonstrating how the tuning range and phase noise performance of the oscillator changes at different temperatures.
未来空间研究的进展需要更好地理解模拟和射频电路在极低温度下的行为。为此,设计了s波段的LC交叉耦合压控振荡器,用于空间通信,作为使用商用0.18 μ m CMOS混合模式/RF器件技术的案例研究。在77 K时,通过从使用液氮进行的晶体管测量中提取的模型,观察到相对于室温的性能变化。一个值得注意的观察表明,通过冷却到低温,振荡器可以落入“功率浪费”区域,因此电路的相位噪声不一定改善在低温运行状态。尽管关于无源器件的低温行为的文献存在空白,但研究表明,电路的变容管阈值和静态节点电压的变化可以显著地改变所需的控制电压。此外,设计了一个压控振荡器,在300k和77k下都能保证实际工作,从而展示了振荡器的调谐范围和相位噪声性能在不同温度下的变化。