Ultra shallow junction doping technology for sub-100 nm CMOS

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 2001-04-18 DOI:10.1109/VTSA.2001.934474

B. Mizuno

引用次数: 0

Abstract

We are greeting the technology "Quantum Leap" encompassing low energy doping processes and novel annealing technologies to be the standard technology which can achieve the ultra shallow junction with very high throughput and lower resistance. The technology is applied to fabricate the sub-100 nm CMOS.

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亚100纳米CMOS的超浅结掺杂技术

我们欢迎包含低能量掺杂工艺和新型退火技术的“量子飞跃”技术成为标准技术，可以实现具有非常高通量和低电阻的超浅结。该技术已应用于亚100nm CMOS的制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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