A Low-Power Triple-Loop Feedback Broadband LNA in a 130 nm SiGe BiCMOS Technology

Abstract

In this paper a low-power Low Noise Amplifier (LNA) with ultra broad bandwidth is presented. We propose a novel circuit-level technique using a triple feedback loop to optimize simultaneously gain, bandwidth and impedance matching without the penalty of added DC power dissipation. The circuit has been fabricated using a 130 nm silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technology. The LNA has a peak gain of 9.3 dB, a minimum noise figure of 4.6 dB and an input compression point (IP1dB) higher than −9.9 dBm. It consumes only 5.4 mW using a single 1.5 V supply voltage, while working over a bandwidth from 14 to 58 GHz and occupying an area of $\mathbf{0.6}\times \mathbf{0.48}\ \mathbf{mm}^{2}$ including pads.