Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Abstract

Ferroelectric FETs (FeFETs) have emerged as a promising multi-level/cell (MLC) nonvolatile memory (NVM) candidate for low-power applications. This originates from the advantages of both efficient memory access and intrinsic device-level in-memory computing flexibilities. However, there still exist challenges for FeFET MLC NVM: (i) high power consumption in read operations due to high-gain requirement for sense amplifiers during sensing, and (ii) high latency and energy consumption in write operations with conventional recursive program-and-verify. Targeting at lower power, less latency, and higher density, this work investigates and optimizes the read and write approaches to MLC FeFET NVM design: (i) Adaptive FeFET memory State Mapping (ASM) between the FeFET drain-source current and the digital states to increase the sensing margin; (ii) Adaptive FeFET Gate Biasing (AGB) read methods that adopt the optimized FeFET gate voltage to boost the sensible dynamic range and to store more levels of states per cell; (iii) Adaptive Prediction-based Direct (APD) write methods that minimize the program-andverify activities. Evaluations show significant latency and energy improvement. Furthermore, the number of sensible levels of states per cell is also increased with an enhanced dynamic sensing range and an enhanced sensing margin.