State of the Art and Future Perspectives in III-V Nanometer-Scale MOSFETs

Abstract

The downscaling of transistors being the biggest challenge in terms of gate length in nanometer scale faces hindrances due to short channel effects and gate leakage current and thus becomes a threat against continuation of Moor’s law making further shrinking of silicon transistors is of no use. Here in this paper some of the recent advances and challenges to overcome have been reviewed of InGaAs MOSFETs. Analog, RF responses of III-V MOSFETs along with possible future of MOSFET architectures using InGaAs as channel material are also being demonstrated. Evolution of III-V FinFETs also reviewed. Scaling should be done to maximize ION at an acceptable level of IOFF. From analyzing the published results it can be easily acknowledged that InGaAs can significantly surpass silicon channel of equal gate length by making a small tradeoff between device performance and short channel effects.