{"title":"Designer Ge quantum dots Coulomb blockade thermometry","authors":"I. Chen, C. C. Wang, P. W. Li","doi":"10.1109/VLSI-TSA.2014.6839670","DOIUrl":null,"url":null,"abstract":"A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (G<sub>D</sub>) dips up to temperature 120K. The full-width-at-half minimum, V<sub>1/2</sub>, of the G<sub>D</sub> dips directly scale with temperature following the material parameter-independent equation of eV<sub>1/2</sub> ~ 5.44k<sub>B</sub>T, providing the primary thermometric quantity. Also the depths of the G<sub>D</sub> dips increases with 1/k<sub>B</sub>T as expected from CB theory of ΔG<sub>D</sub>/G<sub>D0</sub> = E<sub>C</sub>/6k<sub>B</sub>T. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2014.6839670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ~ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/kBT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.