Designer Ge quantum dots Coulomb blockade thermometry

I. Chen, C. C. Wang, P. W. Li
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Abstract

A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ~ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/kBT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.
设计师葛量子点库仑封锁测温
基于锗量子点(QD)单孔晶体管(SHT)的温度依赖性,实验证明了库仑封锁(CB)温度计。Ge-QD SHT具有独特的电流峰值/平台,高达120K的急剧差分电导(GD)下降。GD的半宽最小值V1/2与温度成正比,符合与材料参数无关的eV1/2 ~ 5.44kBT方程,提供了初级测温量。根据CB理论ΔGD/GD0 = EC/6kBT, GD下降深度随1/kBT增加。该实验表明,我们的Ge-QD SHT为检测温度高达115K的超灵敏CB主温度计提供了有效的基础。
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