11.5ns 1M x 1/256K x 4TTL BiCMOS SRAM's with voltage- and temperature-compensated interfaces

Y. Urakawa, M. Matsui, A. Suzuki, N. Urakawa, K. Sato, T. Hamano, H. Kato, K. Ochri
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引用次数: 4
11.5ns 1M x 1/256K x 4TTL BiCMOS SRAM,具有电压和温度补偿接口
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