{"title":"Ku-band power amplifier MIC","authors":"T.E. Bryntseva, I.M. Abolduyev","doi":"10.1109/ICSC.1994.523133","DOIUrl":null,"url":null,"abstract":"The results of the design and fabrication of a Ku-band power amplifier MIC are presented. The frequency range of the MIC is from 14.0 GHz to 14.5 GHz. The key elements of the MIC with an output power of up to 250 mW are GaAs FETs.","PeriodicalId":205681,"journal":{"name":"Proceedings of International Conference on Satellite Communications. ICSC'94","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Conference on Satellite Communications. ICSC'94","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSC.1994.523133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The results of the design and fabrication of a Ku-band power amplifier MIC are presented. The frequency range of the MIC is from 14.0 GHz to 14.5 GHz. The key elements of the MIC with an output power of up to 250 mW are GaAs FETs.