Vertical tunnel diodes on high resistivity silicon

Abstract

We demonstrate for the first time vertical tunnel diodes formed by rapid thermal diffusion using spin-on diffusants on high resistivity (100) Si substrates, 1000-5000 /spl Omega/ cm, 100 mm, allowing the extraction of an RF device model. The simple process flow is compatible with techniques found in any commercial front end. The device model is extracted from DC, microwave frequency S-parameter, and RF impedance measurements. The tunnel diode characteristics are well described by the Schulman-Broekaert analytic model, developed for the resonant tunneling diode, and therefore fit readily into SPICE and ADS modeling environments.