Charge Entrainment by the Solitary Wave in the Graphene Superlattice: Free Carries and Impurity Ionization Cases

S. Kryuchkov, C. Popov
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Abstract

The entrainment of charge carriers by a soliton in the graphene-based superlattice is studied. The case of the free carriers entrainment is investigated in the analytical approach. It is shown that taking into account the week interaction between charge carriers leads to the increase of the drag current. Adding the condition of the presence of impurities in the graphene sheet changes the expression of the drag current by modification of the carrier's density. The problem of ionization is solved in the semiclassical approximation. The analysis reveals the dependence of the ionization probability on the electric field density of the soliton and depth of the impurity energy level.
石墨烯超晶格中孤波的电荷夹带:自由携带和杂质电离情况
研究了石墨烯基超晶格中孤子对载流子的夹带。用分析方法研究了自由载流子夹带的情况。结果表明,考虑载流子之间的相互作用会导致阻力电流的增大。在石墨烯薄片中加入杂质的条件,通过改变载流子的密度来改变阻力电流的表达式。在半经典近似中解决了电离问题。分析揭示了电离概率与孤子电场密度和杂质能级深度的关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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