Quantum capacitance of MIS structures based on diluted magnetic semiconductors

Abstract

Quantum capacitance has an important role in nanoscale device modelling. In the present paper, we investigate the quantum magneto-capacitance of metal-insulator-semiconductor (MIS) structures based on diluted magnetic semiconductors (DMS) in the presence of Rashba spin-orbit interaction (SOI). Typical beating patterns with well defined node-positions in the oscillating quantum capacitance are observed. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the giant Zeeman splitting (including s-d exchange interaction) and the Rashba SOI, is discussed.