c-Axis parallel ZnO piezoelectric multilayer for BAW gyroscope applications

Ayaka Hanai, S. Kudo, Kohei Ekida, Junjun Jia, T. Yanagitani
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Abstract

We presented a new type of gyroscope sensor using the transmission-and-detection type gyroscope sensor with the acoustic delay line. Detecting the pure shear wave can be achieved by using c-axis parallel ZnO films. c-Axis parallel ZnO films can be fabricated by using the ion beam assisted RF magnetron sputtering because c-axis in-plane detection of the top layer and bottom layer can be controlled to be vertical by the technique. In this paper, we propose that the piezoelectric thin films composed of c-axis parallel ZnO films show a shear mode electromechanical coupling coefficient $k_{15^{2}}$ of 2.0%, and especially, the pure shear wave excitation was observed in the gyroscope sensor.
用于BAW陀螺仪的c轴平行ZnO压电多层材料
提出了一种基于声延迟线的传输探测型陀螺仪传感器。利用c轴平行ZnO薄膜可以实现对纯剪切波的检测。利用离子束辅助射频磁控溅射技术制备c轴平行ZnO薄膜,可以控制c轴平面内检测的顶层和底层垂直。本文提出由c轴平行ZnO薄膜组成的压电薄膜具有2.0%的剪切模式机电耦合系数$k_{15^{2}}$,特别是在陀螺仪传感器中观察到纯剪切波激发。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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