A 7.3 THz Cut-Off Frequency, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659195

N. El-Hinnawy, P. Borodulin, B. Wagner, M. King, J. Mason, E. B. Jones, V. Veliadis, R. Howell, R. Young, Michael J. Lee

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引用次数: 31

Abstract

An inline chalcogenide phase change RF switch utilizing germanium telluride (GeTe) and driven by an integrated, electrically isolated thin film heater for thermal actuation has been fabricated. A voltage or current pulse applied to the heater terminals was used to transition the phase change material between the crystalline and amorphous states. An on-state resistance of 1.2 Ω (0.036 Ω-mm), with an off-state capacitance and resistance of 18.1 fF and 112 kΩ respectively were measured. This results in an RF switch cut-off frequency (Fco) of 7.3 THz, and an off/on DC resistance ratio of 9 × 104. The heater pulse power required to switch the GeTe between the two states was as low as 0.5W, with zero power consumption during steady state operation, making it a non-volatile RF switch. To the authors' knowledge, this is the first reported implementation of an RF phase change switch in a 4-terminal, inline configuration.

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7.3太赫兹截止频率，在线，硫族相变射频开关使用一个独立的电阻加热器热致动

制备了一种利用碲化锗(GeTe)并由集成的电隔离薄膜加热器驱动的嵌入式硫系相变射频开关。在加热端子上施加电压或电流脉冲，使相变材料在晶态和非晶态之间转变。导通电阻为1.2 Ω (0.036 Ω-mm)，关断电容和电阻分别为18.1 fF和112 kΩ。这导致射频开关截止频率(Fco)为7.3太赫兹，关/通直流电阻比为9 × 104。在两种状态之间切换GeTe所需的加热器脉冲功率低至0.5W，稳态工作时功耗为零，是一种非易失性RF开关。据作者所知，这是第一个在4端内联配置中实现射频相变开关的报道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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