Polarization insensitive interferometric wavelength converter with tensile strained InGaAs/InGaAsP MQW structure

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491979

M. Schilling, P. Wiedemann, K. Daub, W. Idler, M. Klenk, U. Koerner, E. Lach, G. Laube, K. Wunstel

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引用次数: 2

Abstract

Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio /spl les/1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated.

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具有拉伸应变InGaAs/InGaAsP MQW结构的偏振不敏感干涉波长转换器

首次实现了基于集成三端口Mach-Zehnder干涉仪(MZI)结构的紧凑单片波长转换器，由于加入了拉伸应变的MQW有源层，其偏振灵敏度大大降低。(InGaAs/InGaAsP) MQW结构是由LP MOVPE在全2英寸n-InP衬底上生长的。通过对拉伸应变(变化范围在-0.3和-0.45%之间)的微调，根据建模结果确定了实现TE和TM模式均匀增益的最佳条件。对MZI器件的静态和动态全光波长转换性能进行了评价。当拉伸应变为-0.34%时，MZI波长转换器的TE/TM比得到最佳结果。在20 nm波长转换窗口内实现了TE/TM比/spl /1 dB。演示了无惩罚的2.5 Gbit/s偏振不敏感全光波长转换，包括消光比的改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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