A novel Si-based X'tal oscillator device using 3D integration technologies

Abstract

A novel Si-based X'tal oscillator device (1.2 mm × 1.0 mm) is demonstrated by using 3D integration technologies. It is distinct from conventional X'tal oscillator device with ceramics and metal lid. The novel Si-based X'tal oscillator device shows no leakage path, and passes the hermetic encapsulation test and reliability investigation. In addition, the novel device shows the excellent electrical characteristics and provides the possibility to replace the conventional fabrication approach for the next generation products.