A 130-GHz OOK transmitter in 65-nm CMOS technology

Namhyung Kim, Heekang Son, Dong-Hyun Kim, J. Rieh
{"title":"A 130-GHz OOK transmitter in 65-nm CMOS technology","authors":"Namhyung Kim, Heekang Son, Dong-Hyun Kim, J. Rieh","doi":"10.1109/SIRF.2016.7445484","DOIUrl":null,"url":null,"abstract":"A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.","PeriodicalId":138697,"journal":{"name":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2016.7445484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.
采用65纳米CMOS技术的130 ghz OOK发射机
本研究开发了一种基于65纳米CMOS技术的130 ghz OOK发射机。该发射机由一个130 ghz基频振荡器和一个基于开关的OOK调制器组成。振荡器采用带锥形缓冲器的LC交叉耦合差分对,开关采用三级分流配置。开关的开/关功率比大于20db,开关打开时发射机输出功率为-5.1 dBm。用频域技术测得发射机的3db带宽为16ghz。发射机消耗55.2 mW,主要来自振荡器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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