Electrostatic micro actuators with high-aspect-ratio driving gap for hard disk drive application

T. Iizuka, T. Oba, H. Fujita
{"title":"Electrostatic micro actuators with high-aspect-ratio driving gap for hard disk drive application","authors":"T. Iizuka, T. Oba, H. Fujita","doi":"10.1109/MHS.2000.903330","DOIUrl":null,"url":null,"abstract":"Micro actuators are developed for hard disk drive application. The aim is high density data storage by positioning the read and write head element precisely. The desired specifications are displacement of /spl plusmn/1 /spl mu/m, operating voltage of 20 V and structural resonance frequency of 151 Hz. We fabricated a metallic actuator by using thick photoresist lithography and nickel electroplating. The electrostatic gap between the mover and the stator has high aspect ratio to achieve low voltage operation. We introduce a vertical sacrificial layer of copper to make the electrostatic gap. We utilize photoresist with thickness of 10 /spl mu/m. We completed the process and operated the actuator successfully. We also developed a silicon actuator using silicon deep etching and deposition technology. We use ICP-RIE for silicon etching and LPCVD for deposition of the vertical sacrificial layer of SiO/sub 2/ and the mover structure of polysilicon. We obtained an actuator which had thickness of 100 /spl mu/m with electrode gap of aspect ratio of 50.","PeriodicalId":372317,"journal":{"name":"MHS2000. Proceedings of 2000 International Symposium on Micromechatronics and Human Science (Cat. No.00TH8530)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"MHS2000. Proceedings of 2000 International Symposium on Micromechatronics and Human Science (Cat. No.00TH8530)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MHS.2000.903330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Micro actuators are developed for hard disk drive application. The aim is high density data storage by positioning the read and write head element precisely. The desired specifications are displacement of /spl plusmn/1 /spl mu/m, operating voltage of 20 V and structural resonance frequency of 151 Hz. We fabricated a metallic actuator by using thick photoresist lithography and nickel electroplating. The electrostatic gap between the mover and the stator has high aspect ratio to achieve low voltage operation. We introduce a vertical sacrificial layer of copper to make the electrostatic gap. We utilize photoresist with thickness of 10 /spl mu/m. We completed the process and operated the actuator successfully. We also developed a silicon actuator using silicon deep etching and deposition technology. We use ICP-RIE for silicon etching and LPCVD for deposition of the vertical sacrificial layer of SiO/sub 2/ and the mover structure of polysilicon. We obtained an actuator which had thickness of 100 /spl mu/m with electrode gap of aspect ratio of 50.
高纵横比驱动间隙静电微致动器,用于硬盘驱动器
微致动器是为硬盘驱动器应用而开发的。通过精确定位读写头元件,实现数据的高密度存储。要求的规格为位移/spl plusmn/1 /spl mu/m,工作电压为20 V,结构谐振频率为151 Hz。采用厚光刻技术和镀镍工艺制备了金属致动器。动、定子之间的静电间隙具有高宽高比,可实现低电压运行。我们引入一个垂直的牺牲层铜来制造静电间隙。我们使用厚度为10 /spl μ m的光刻胶。我们完成了这个过程,并成功地操作了执行器。我们还利用硅深刻蚀和沉积技术开发了一种硅致动器。我们使用ICP-RIE进行硅蚀刻,使用LPCVD沉积SiO/sub 2/的垂直牺牲层和多晶硅的移动结构。我们得到了厚度为100 /spl mu/m,电极间距宽高比为50的致动器。
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