Modelling of a sensor for gas adsorption on P and Ga doped GNRFET

Abstract

This paper focuses on the modelling of a Top and Bottom gated Nano -GNRFET for gas sensing using Sentaurus and VASP. The models are doped separately with Phosphorus and Gallium. 32nm fabrication technology is used for modelling the Top Gated and 350nm for Bottom gated GNRFET. Under the influences of gases, doped GNRFET has a considerable change in threshold voltage and IDmax making the proposed models promising candidates for Nano scale sensing of N2O and O2 gas.i