{"title":"A 200M sample/s 6b flash ADC in 0.6 /spl mu/m CMOS","authors":"J. Spalding, D. Dalton","doi":"10.1109/ISSCC.1996.488636","DOIUrl":null,"url":null,"abstract":"This 6b flash analog-to-digital converter (ADC) performs the sampling function in a partial-response, maximum-likelihood disk drive read channel. The read channel must process signals with spectral content extending up to half the sampling rate. This requires an ADC with better than 5 effective bits at Nyquist, accomplished here using a full-flash architecture capable of sampling at 200 MHz. To meet cost objectives, the read channel is on 0.6 /spl mu/m single-poly CMOS, where the ADC achieves performance previously seen only on bipolar or BiCMOS processes.","PeriodicalId":162539,"journal":{"name":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1996.488636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
This 6b flash analog-to-digital converter (ADC) performs the sampling function in a partial-response, maximum-likelihood disk drive read channel. The read channel must process signals with spectral content extending up to half the sampling rate. This requires an ADC with better than 5 effective bits at Nyquist, accomplished here using a full-flash architecture capable of sampling at 200 MHz. To meet cost objectives, the read channel is on 0.6 /spl mu/m single-poly CMOS, where the ADC achieves performance previously seen only on bipolar or BiCMOS processes.