{"title":"High Temperature Uncooled Lasers","authors":"C. Zah, R. Bhat, T. Lee","doi":"10.1364/slada.1995.wa.2","DOIUrl":null,"url":null,"abstract":"An uncooled laser transmitter is cheaper and more reliable than a\n thermo-electrically cooled laser transmitter because of its simplicity\n in packaging. A low-cost, highly-reliable uncooled laser may have a\n strong influence on pushing fiber deployment closer to the home. For\n loop applications, the laser transmitter must operate reliably over\n the temperature range from -40 to 85°C. It is rather difficult to make\n high performance uncooled lasers in the long wavelength region\n (1.3-1.55 μm) using the conventional\n GaxIn1-xASyP1-y/InP\n materials system because the laser temperature performance suffers\n from Auger recombination in the low bandgap material and poor electron\n confinement resulting from the small conduction band offset\n (ΔEc=0.4ΔEg). We will discuss the design of\n uncooled lasers to minimize the changes in both threshold current and\n slope efficiency over the temperature range from -40 to 85 °C. To\n prevent carrier overflow under high-temperature operation, the\n electron confinement energy is increased by using the\n AlxGayIn1-x-yAs/InP materials system\n instead of the conventional\n GaxIn1-xASyP1-y/InP\n materials system. Experimental results of the\n AlxGayIn1-x-yAs/InP strained quantum\n well lasers show superior high temperature performances as discussed\n below.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Lasers Advanced Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/slada.1995.wa.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An uncooled laser transmitter is cheaper and more reliable than a
thermo-electrically cooled laser transmitter because of its simplicity
in packaging. A low-cost, highly-reliable uncooled laser may have a
strong influence on pushing fiber deployment closer to the home. For
loop applications, the laser transmitter must operate reliably over
the temperature range from -40 to 85°C. It is rather difficult to make
high performance uncooled lasers in the long wavelength region
(1.3-1.55 μm) using the conventional
GaxIn1-xASyP1-y/InP
materials system because the laser temperature performance suffers
from Auger recombination in the low bandgap material and poor electron
confinement resulting from the small conduction band offset
(ΔEc=0.4ΔEg). We will discuss the design of
uncooled lasers to minimize the changes in both threshold current and
slope efficiency over the temperature range from -40 to 85 °C. To
prevent carrier overflow under high-temperature operation, the
electron confinement energy is increased by using the
AlxGayIn1-x-yAs/InP materials system
instead of the conventional
GaxIn1-xASyP1-y/InP
materials system. Experimental results of the
AlxGayIn1-x-yAs/InP strained quantum
well lasers show superior high temperature performances as discussed
below.