High Temperature Uncooled Lasers

C. Zah, R. Bhat, T. Lee
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Abstract

An uncooled laser transmitter is cheaper and more reliable than a thermo-electrically cooled laser transmitter because of its simplicity in packaging. A low-cost, highly-reliable uncooled laser may have a strong influence on pushing fiber deployment closer to the home. For loop applications, the laser transmitter must operate reliably over the temperature range from -40 to 85°C. It is rather difficult to make high performance uncooled lasers in the long wavelength region (1.3-1.55 μm) using the conventional GaxIn1-xASyP1-y/InP materials system because the laser temperature performance suffers from Auger recombination in the low bandgap material and poor electron confinement resulting from the small conduction band offset (ΔEc=0.4ΔEg). We will discuss the design of uncooled lasers to minimize the changes in both threshold current and slope efficiency over the temperature range from -40 to 85 °C. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the AlxGayIn1-x-yAs/InP materials system instead of the conventional GaxIn1-xASyP1-y/InP materials system. Experimental results of the AlxGayIn1-x-yAs/InP strained quantum well lasers show superior high temperature performances as discussed below.
高温非冷却激光器
由于封装简单,非冷却激光发射机比热电冷却激光发射机更便宜、更可靠。一种低成本、高可靠的非冷却激光器可能会对推动光纤部署更接近家庭产生重大影响。对于环路应用,激光发射器必须在-40至85°C的温度范围内可靠地工作。传统的GaxIn1-xASyP1-y/InP材料体系在长波长区域(1.3 ~ 1.55 μm)制备高性能非冷却激光器是相当困难的,因为低带隙材料中存在俄歇复合,并且导带偏移小(ΔEc=0.4ΔEg)导致了较差的电子约束。我们将讨论非冷却激光器的设计,以尽量减少阈值电流和斜率效率在-40至85°C温度范围内的变化。为了防止高温下载流子溢出,采用AlxGayIn1-x-yAs/InP材料体系代替传统的GaxIn1-xASyP1-y/InP材料体系增加了电子约束能。实验结果表明,AlxGayIn1-x-yAs/InP应变量子阱激光器具有优异的高温性能,如下所述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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