Current-voltage and low frequency noise measurements on LT-InAlAs grown by MBE

Abstract

The properties of InAlAs layers grown lattice matched to InP by molecular beam epitaxy (MBE) were investigated. For a large range of growth conditions (temperature, V/III beam equivalent pressure ratio, doping level), we have detected 3 deep electron trap families E1, E2, and E3 in the material bandgap. The presence of these traps give rise to a defect-assisted tunneling current in the space-charge region of Schottky diodes at low forward and reverse biases. The observed low frequency l/fl in reverse bias is interpreted in terms of fluctuations of the Schottky barrier height.