{"title":"Numerical simulation of selected semiconductor devices","authors":"V. Palankovski, S. Selberherr","doi":"10.1109/ISSE.2004.1490390","DOIUrl":null,"url":null,"abstract":"We present a review of industrial heterostructure devices, based on SiGe/Si and III-V compound semiconductors, analyzed by means of numerical simulation. Critical modeling issues are addressed. Results from 2D hydrodynamic analyses of heterojunction bipolar transistors (HBTs) and field-effect transistors (FETs) are presented, and are in good agreement with measured data.","PeriodicalId":342004,"journal":{"name":"27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004.","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSE.2004.1490390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present a review of industrial heterostructure devices, based on SiGe/Si and III-V compound semiconductors, analyzed by means of numerical simulation. Critical modeling issues are addressed. Results from 2D hydrodynamic analyses of heterojunction bipolar transistors (HBTs) and field-effect transistors (FETs) are presented, and are in good agreement with measured data.