Two-stage MMIC medium power amplifier using depletion mode PHEMT for 5.8GHz applications

Abstract

The design and performances of two-stage monolithic microwave integrated circuit (MMIC) medium power amplifier (MPA) for 5.8 GHz applications are presented using a 0.5um commercial GaAs pseudomorphic high electron mobility transistor (PHEMT) technology. The simulated performance shows a two-stage MPA are achieves an associated gain of 16.39dB, P1dB of 20.18dBm, power gain of 15.18 dB and the PAE of 25.30%. While, the measured performance shows a two-stage MPA is achieves an associated gain of 8.33dB. At 5.0V of drain voltage, VDS and 0V of gate voltage, VGS; this MPA consume 111mA of simulated total current and 200.2mA of measured total current. The chip size is 1.7 × 0.85 mm2.