Towards an understanding of electrically active carbon interstitial defects in Si/sub 1-y/C/sub y/ buried channel n-MOSFETs

Abstract

A comprehensive interface defect identification in Si/sub 1-y/C/sub y/ buried channel n-MOSFETs is presented. Interface state density (D/sub it/) and trapped oxide charges (Q/sub ox/) are characterized by capacitive and charge pumping measurements. We show the predominant role of the interstitial carbon related defects C/sub s/-C/sub i//sup +/ and C/sub i//sup -/ on the interface degradation. Moreover, the boron impact on these carbon interface defects is investigated. Carbon incorporation into the oxide during surface oxidation is also discussed.