RF benchmark tests for compact MOS models

Abstract

Next to accurate fits of measurements, smoothness, and robustness, compact MOSFET models should ideally meet a large number of additional requirements. In this paper, we collect and derive a number of such demands that are important for RF-circuit applications. We present, for the first time, a derivation for the required reciprocity of capacitances at zero bias. We also derive from first principles the expected non-quasi-static behavior of a MOSFET at VDS = 0 as well as its thermal noise. This leads to a number of benchmark tests that a compact model needs to pass to ensure its suitability for RF-circuit applications. Finally, it is shown that the CMC standard model PSP satisfies all presented requirements.