A 0.3V 10bit 7.3fJ/conversion-step SAR ADC in 0.18μm CMOS

C. Hsieh, Shen-Iuan Liu
{"title":"A 0.3V 10bit 7.3fJ/conversion-step SAR ADC in 0.18μm CMOS","authors":"C. Hsieh, Shen-Iuan Liu","doi":"10.1109/ASSCC.2014.7008926","DOIUrl":null,"url":null,"abstract":"A 0.3V 10-bit rail-to-rail successive approximation register (SAR) analog-to-digital converter (ADC) is realized in 0.18-μm CMOS process. While the supply is 0.3V, a double-boosted sampling switch and a supply-boosted time-domain comparator are proposed to decrease the on-resistance of the switches and improve the conversion time, respectively. To lower the power, differential dynamic switches are used to control the splitting capacitors of the digital-to-analog converter. This ADC achieves the SNDR of 54.57dB and the SFDR of 69.89dB, respectively. The power consumes 15.9nW at 5kS/s from a 0.3V supply. A figure-of-merit of 7.3fJ/conversion-step for this ADC is achieved.","PeriodicalId":161031,"journal":{"name":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2014.7008926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

Abstract

A 0.3V 10-bit rail-to-rail successive approximation register (SAR) analog-to-digital converter (ADC) is realized in 0.18-μm CMOS process. While the supply is 0.3V, a double-boosted sampling switch and a supply-boosted time-domain comparator are proposed to decrease the on-resistance of the switches and improve the conversion time, respectively. To lower the power, differential dynamic switches are used to control the splitting capacitors of the digital-to-analog converter. This ADC achieves the SNDR of 54.57dB and the SFDR of 69.89dB, respectively. The power consumes 15.9nW at 5kS/s from a 0.3V supply. A figure-of-merit of 7.3fJ/conversion-step for this ADC is achieved.
基于0.18μm CMOS的0.3V 10bit 7.3fJ/转换阶SAR ADC
采用0.18 μm CMOS工艺实现了一个0.3V的10位轨轨逐次逼近寄存器(SAR)模数转换器(ADC)。在电源为0.3V时,采用双升压采样开关和电源升压时域比较器分别降低开关导通电阻和提高转换时间。为了降低功率,采用差分动态开关控制数模转换器的分频电容。该ADC的SNDR和SFDR分别为54.57dB和69.89dB。功率消耗15.9nW在5k /s从0.3V电源。该ADC的品质因数为7.3fJ/转换步长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信