A wideband millimeter-wave frequency doubler-tripler in 0.13-µm CMOS

Shadi Saberi Ghouchani, J. Paramesh
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引用次数: 37

Abstract

A combined frequency doubler and tripler is proposed for wideband millimeter wave frequency generation in CMOS. The circuit consists of a push-push FET frequency doubler along with a single-balanced mixer based frequency tripler. The frequency doubler-tripler can generate frequencies in the range of 23–48 GHz with more than −20dBm output power into 50Ω. The conversion gains of the doubler and tripler are measured to be −2.6dB and −12.3 dB, respectively, with a 0dBm input at 14.4GHz. Fabricated in 0.13-µm CMOS, the circuit has an active area of 600×440 µm2. The frequency multipliers consume 12.6mW dc power from 1.2V supply, while the output buffers consume 11.9mW.
一种0.13µm CMOS的宽带毫米波倍频三倍器
提出了一种结合倍频和三倍频的CMOS宽带毫米波频率产生方法。该电路由推推式场效应管倍频器和基于单平衡混频器的三倍频器组成。该倍频三倍器可以产生23 - 48ghz的频率,输出功率大于- 20dBm,输出功率为50Ω。在14.4GHz的0dBm输入下,倍频器和三频器的转换增益分别测量为−2.6dB和−12.3 dB。该电路采用0.13µm CMOS制造,有效面积为600×440µm2。乘频器消耗来自1.2V电源的12.6mW直流功率,而输出缓冲器消耗11.9mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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