RFiop: RF-memory path to address on-package I/O pad and memory controller scalability

M. Marino
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引用次数: 10

Abstract

Off-chip memory parallelism can be improved by having multiple memory controllers (MCs). However, MCs scalability is limited by the number and area of I/O pads/pins allocated to them, besides power. In order to address the scalability of MCs and I/O pads in a multi-chip (MCP) flip-chip package, we propose RFiop - a scalable memory organization based on wired-RF, which replaces the traditional MC-DRAM, mostly composed by MC, and I/O pad/pin related structures with RF-designed RFMCs - MCs coupled to RF transmitters (TX) / receivers (RX), RF coplanar waveguides (CPW) - defined as RFpads, and off-die ranks placed on a coplanar fashion. RFiop explores the on-package area to fit off-die ranks, which are connected to the RFMCs via CPWs. Configuring RFiop with off-die lower data-rate-DDR3 ranks, RFiop scales bandwidth for 16 out-of-order (OOO) cores, using 16 RFMCs with about 4 RFpads per RFMC. RFiop leverages performance and bandwidth by a factor of up to 3.95×, while reducing latency in up to 47%, assuming an electrical-based solution under I/O pad constraints as baseline. Dedicating the baseline area to placing several RFMCs, RFiop improves bandwidth in up to 2.68×.
RFiop:射频存储器路径,用于解决包上I/O垫和存储器控制器的可扩展性
片外存储器的并行性可以通过使用多个存储器控制器(mc)来提高。然而,MCs的可伸缩性受到分配给它们的I/O垫/引脚的数量和面积的限制,此外还受到功率的限制。为了解决多芯片(MCP)倒装封装中MCs和I/O焊盘的可扩展性问题,我们提出了RFiop——一种基于有线射频的可扩展存储器组织,它取代了传统的MC- dram,主要由MC组成,以及与RF设计的rfmc相关的I/O焊盘/引脚结构——MCs耦合到RF发射器(TX) /接收器(RX), RF共面波导(CPW),定义为rfpad,并以共面方式放置芯片外排列。RFiop探索封装内区域,以适应通过cpw连接到rfmc的off-die级。配置RFiop的低数据速率- ddr3等级,RFiop为16个乱序(OOO)内核扩展带宽,使用16个RFMC,每个RFMC约4个rfpad。RFiop利用高达3.95倍的性能和带宽,同时减少47%的延迟,假设在I/O板限制下的基于电气的解决方案为基准。RFiop将基线区域用于放置多个rfmc,将带宽提高了2.68倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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