V. T. Vu, D. Céli, T. Zimmer, S. Frégonèse, P. Chevalier
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引用次数: 14
Abstract
This paper presents a novel Fully Self-Aligned (FSA) Si/SiGe HBT architecture using Selective Epitaxial Growth (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from the Collector (EXBIC). The one is integrated into the bulk area of the 28-nm FD-SOI CMOS technology developed at STMicroelectronics. All the parameters of the architecture such as the boron-doped base link, the emitter width and height, the pedestal oxide and sidewall thicknesses are evaluated by TCAD simulation. A low base-collector capacitance, independent from the extrinsic base doping is obtained. Optimized architecture exhibits 420 GHz fT and 780 GHz fMAX.