Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS

V. T. Vu, D. Céli, T. Zimmer, S. Frégonèse, P. Chevalier
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引用次数: 14

Abstract

This paper presents a novel Fully Self-Aligned (FSA) Si/SiGe HBT architecture using Selective Epitaxial Growth (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from the Collector (EXBIC). The one is integrated into the bulk area of the 28-nm FD-SOI CMOS technology developed at STMicroelectronics. All the parameters of the architecture such as the boron-doped base link, the emitter width and height, the pedestal oxide and sidewall thicknesses are evaluated by TCAD simulation. A low base-collector capacitance, independent from the extrinsic base doping is obtained. Optimized architecture exhibits 420 GHz fT and 780 GHz fMAX.
用于28纳米FD-SOI BiCMOS的先进Si/SiGe HBT架构
本文提出了一种新颖的完全自对齐(FSA) Si/SiGe HBT结构,采用选择性外延生长(SEG),并具有与收集器隔离的外延外源基(EXBIC)。其中一个集成在意法半导体开发的28纳米FD-SOI CMOS技术的大块区域中。通过TCAD仿真计算了该结构的所有参数,如掺硼基链、发射极宽度和高度、基座氧化物和侧壁厚度。获得了与外部碱掺杂无关的低碱集电极电容。优化后的架构显示420 GHz fT和780 GHz fMAX。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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