{"title":"A CMOS LNA with Noise Cancellation for 3.1-10.6 GHz UWB Receivers Using Current-Reuse Configuration","authors":"Feng Lu, Lei Xia","doi":"10.1109/ICCSC.2008.180","DOIUrl":null,"url":null,"abstract":"For the matching devices fix the gain of the latter stage, elementary noise canceling LNAs suffer inferior global power gain. In contrast, this paper presents an ultra-wideband 3.1-10.6 GHz low noise amplifier, which can save more power, contribute lower noise figure and provide higher gain by using a noise-canceling technique, current reuse and a single on-chip transformer. The amplifier is implemented in 0.18- mum CMOS technology, and the IC prototype exhibits a small signal gain of 16.3 dB over a -3 dB bandwidth of 3.5-10.4 GHz, and a noise figure of 3.9-5.8 dB in the entire UWB band. The LNA consumes 12.9 mW from a 1.8 V power supply and only has 1.4 mm2 die area.","PeriodicalId":137660,"journal":{"name":"2008 4th IEEE International Conference on Circuits and Systems for Communications","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 4th IEEE International Conference on Circuits and Systems for Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCSC.2008.180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
For the matching devices fix the gain of the latter stage, elementary noise canceling LNAs suffer inferior global power gain. In contrast, this paper presents an ultra-wideband 3.1-10.6 GHz low noise amplifier, which can save more power, contribute lower noise figure and provide higher gain by using a noise-canceling technique, current reuse and a single on-chip transformer. The amplifier is implemented in 0.18- mum CMOS technology, and the IC prototype exhibits a small signal gain of 16.3 dB over a -3 dB bandwidth of 3.5-10.4 GHz, and a noise figure of 3.9-5.8 dB in the entire UWB band. The LNA consumes 12.9 mW from a 1.8 V power supply and only has 1.4 mm2 die area.