System 901: low K, copper MCM-C packaging

Abstract

To meet the packaging needs of today's larger faster IC's DuPont Electronics has developed system 901. It is based on a crystallizable cordierite dielectric for low K, high strength, silicon matched TCE, combined with high conductivity copper metallization. Processing is easily carried out either with copper electrodes in a H/sub 2/O/N/sub 2/ atmosphere or with CuO electrodes in a burnout/reduction/sinter sequence. In both modes, circuits meet packaging performance requirements, especially distortion-free camber, without the need for constrained-sintering. The achievement of these properties has required an understanding of the origin of the forces affecting sintering, and the development of modifiers to control those forces.<>