{"title":"A new Y5V 0603 0.1 /spl mu/F ceramic chip capacitor","authors":"J. Day, S. Gupta","doi":"10.1109/ECTC.1994.367591","DOIUrl":null,"url":null,"abstract":"Improved technologies have been developed to manufacture 0.1 /spl mu/F surface mountable ceramic chips in the 0603 size. A new dielectric based on barium titanate was developed with a Y5V temperature characteristic to achieve maximum dielectric constant. These parts achieve excellent electrical and mechanical reliability and are robust in wave soldering processes. To minimize cost the dielectric was designed to fire at 1145/spl deg/C by adding compatible low melting glass frit in order to use low cost electrodes with a high percentage of silver. In order to increase the capacitance per layer improved manufacturing processes were developed to achieve thin dielectric layers and narrow electrode side margins.<<ETX>>","PeriodicalId":344532,"journal":{"name":"1994 Proceedings. 44th Electronic Components and Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 Proceedings. 44th Electronic Components and Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1994.367591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Improved technologies have been developed to manufacture 0.1 /spl mu/F surface mountable ceramic chips in the 0603 size. A new dielectric based on barium titanate was developed with a Y5V temperature characteristic to achieve maximum dielectric constant. These parts achieve excellent electrical and mechanical reliability and are robust in wave soldering processes. To minimize cost the dielectric was designed to fire at 1145/spl deg/C by adding compatible low melting glass frit in order to use low cost electrodes with a high percentage of silver. In order to increase the capacitance per layer improved manufacturing processes were developed to achieve thin dielectric layers and narrow electrode side margins.<>