Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs

Abstract

A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.