Cheon-Hyo Lee, Jeong-Hoon Kim, Jae-Hyung Lee, Liyan Jin, Yong-Hu Yin, Ji-Hye Jang, Min-cheol Kang, P. Ha, Young-Hee Kim
{"title":"Design of low-power and high-speed receiver for mobile display module","authors":"Cheon-Hyo Lee, Jeong-Hoon Kim, Jae-Hyung Lee, Liyan Jin, Yong-Hu Yin, Ji-Hye Jang, Min-cheol Kang, P. Ha, Young-Hee Kim","doi":"10.1109/SOCDC.2008.4815741","DOIUrl":null,"url":null,"abstract":"We newly proposed a low-power and high-speed mobile display digital interface (MDDI) client receiver in this paper. The receiver was designed as a low-power circuit which had a constant current dissipation over variations of the common-mode voltage (VCM) and power supply voltage, and was able to operate at a rate of 450 Mbps or above under the conditions of a power supply of 3.3 V and a temperature range of -40 to 85degC. A test chip was manufactured with the 0.35 mum CMOS process. When a test was done with a function generator, the data receiver and data recovery circuit were functioning normally.","PeriodicalId":405078,"journal":{"name":"2008 International SoC Design Conference","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2008.4815741","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We newly proposed a low-power and high-speed mobile display digital interface (MDDI) client receiver in this paper. The receiver was designed as a low-power circuit which had a constant current dissipation over variations of the common-mode voltage (VCM) and power supply voltage, and was able to operate at a rate of 450 Mbps or above under the conditions of a power supply of 3.3 V and a temperature range of -40 to 85degC. A test chip was manufactured with the 0.35 mum CMOS process. When a test was done with a function generator, the data receiver and data recovery circuit were functioning normally.