Design and modeling of PIN photodiode using MEMS technology

Shubankar Kumar, T. Shanmuganantham
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Abstract

This Paper describes a micro PIN photodiode model using Micro-electromechanical Systems (MEMS) technology. The model is developed using Comsol Multiphysics Software. This interface combines the semiconductor interface with the electromagnetic waves, frequency domain interface and is suitable for modeling direct band-gap optoelectronic semiconductor devices. This device is operated at a wavelength of 725 nm for the peak value of the current. The width and the height of the device is 0.5[μm] and 1[μm] respectively. This PIN photodiode can be uses as a light sensor for the solar applications like sun sensor, solar light, solar battery and solar instruments. It is also suitable for the industrial and inter terrestrial applications.
基于MEMS技术的PIN光电二极管设计与建模
本文介绍了一种基于微机电系统(MEMS)技术的微型PIN光电二极管模型。该模型是用Comsol Multiphysics软件开发的。该接口将半导体接口与电磁波、频域接口相结合,适用于直接带隙光电半导体器件的建模。该装置的工作波长为725nm,为电流的峰值。器件的宽度为0.5[μm],高度为1[μm]。这种PIN光电二极管可以用作太阳能应用的光传感器,如太阳传感器,太阳能灯,太阳能电池和太阳能仪器。它也适用于工业和地面应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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