Thermal analysis and reliability evaluation on high power flip chip LED

Abstract

We showed a detailed thermal simulation of a high power flip-chip packaged LED, simulation results show that the junction temperature of the LED is more sensitive to the adhesive layer material between the Si substrate and the 1000μm thick Cu heatsink, and less sensitive to the bonding ball material and the heatsink material. Furthermore, three groups of aging tests were conducted on this type of high power flip chip LED, according to the linear regression analysis, the extrapolated lifetime of the high power flip chip LED at 25°C is 37718 hours, we also obtain an acceleration factor 70.5 of resulting in a thermal activation energy of Ea=0.35eV using Arrhenius function.