Temperature-aware NBTI modeling and the impact of input vector control on performance degradation

Yu Wang, Hong Luo, Ku He, Rong Luo, Huazhong Yang, Yuan Xie
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引用次数: 90

Abstract

As technology scales, negative bias temperature instability (NBTI), which causes temporal performance degradation in digital circuits by affecting PMOS threshold voltage, is emerging as one of the major circuit reliability concerns. In this paper, the authors first investigate the impact of NBTI on PMOS devices and propose a novel temporal performance degradation model for digital circuits considering the temperature difference between active and standby mode. For the first time, the impact of input vector control (to minimize standby leakage) on the NBTI is investigated. Minimum leakage vectors, which lead to minimum circuit performance degradation and remains maximum leakage reduction rate, are selected and used during the standby mode. Furthermore, the potential to save the circuit performance degradation by internal node control techniques during circuit standby mode is discussed. Our simulation results show that: 1) the active and standby time ratio and the standby mode temperature have considerable impact on the circuit performance degradation; 2) the NBTI-aware IVC technique leads to an average 3% savings of the total circuit degradation; while the potential of internal node control may lead to 10% savings of the total circuit degradation
温度感知的NBTI建模及输入矢量控制对性能退化的影响
随着技术的发展,负偏置温度不稳定性(NBTI)通过影响PMOS阈值电压而导致数字电路的时间性能下降,成为电路可靠性的主要问题之一。在本文中,作者首先研究了NBTI对PMOS器件的影响,并提出了一种考虑主机和待机模式温差的数字电路时间性能退化模型。首次研究了输入矢量控制(最小化待机泄漏)对NBTI的影响。在待机模式中,选择导致电路性能下降最小并保持最大泄漏减少率的最小泄漏向量。此外,还讨论了在电路待机模式下通过内部节点控制技术来避免电路性能下降的可能性。仿真结果表明:1)主、待机时间比和待机温度对电路性能下降有较大影响;2) nbti感知IVC技术导致总电路退化平均节省3%;而内部节点控制的潜力可能导致10%的总电路退化节省
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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