Modeling and calibration of ADP process for inductance calculation with InductEx

C. Fourie, X. Peng, A. Takahashi, N. Yoshikawa
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引用次数: 3

Abstract

The AIST advanced process (ADP2), with 9 Nb layers and 1 μm minimum Josephson junction size is currently the most complex low-Tc superconductive integrated circuit fabrication process in operation. With planarization for all layers below the main ground plane, and conductors that may traverse several layers, modeling inductance for numerical calculation requires special attention to the capabilities of the extraction tool. We present specific improvements made to InductEx to model the ADP process, including support for selective layer planarization, multiple ground planes and conductors below a ground plane. We discuss calibration of extracted values to experimental results, and show results for pulse transfer cells with inductive coupling and isolated ground planes.
电感计算ADP过程的建模与标定
AIST先进工艺(ADP2)是目前运行中最复杂的低tc超导集成电路制造工艺,具有9个Nb层和最小约瑟夫森结尺寸1 μm。由于主地平面以下的所有层都是平面化的,并且导体可能会穿过几层,因此为数值计算建模电感需要特别注意提取工具的能力。我们提出了对InductEx进行的具体改进,以模拟ADP过程,包括支持选择性层平面化,多个接地面和接地面以下的导体。我们讨论了提取值与实验结果的校准,并给出了具有电感耦合和隔离地平面的脉冲传递单元的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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