Low-K and Interconnect Stacks -- a Status Report

D. James
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引用次数: 4

Abstract

One of the interesting aspects of the migration of low-k into state-of-the-art processes is that almost every manufacturer does it differently - as a generality, there seems to be a greater variety in the detail of low-k implementation than there was in the metal-dielectric structures in the "good old days" of aluminium metallization. Some manufacturers use a simple two-layer dielectric, dual-damascene matrix in their interconnect stack, and others have complex multilayers with single-damascene metal tracks and vias. Chipworks, as a supplier of competitive intelligence to the semiconductor and electronics industries, monitors the evolution of chip processes as they come into commercial production. Chipworks has obtained parts from leading edge manufacturers, and performed structural analyses to examine the features and manufacturing processes of the devices. The paper discusses how low-k dielectrics have been used by various vendors, and gives a comparison of their different back-end-of-line technologies. The paper will detail the physical structures we have analyzed, and also examine the different approaches to the use of low-k dielectric materials
低k和互连堆栈—状态报告
从低钾到最先进工艺的一个有趣的方面是,几乎每个制造商都有不同的做法——一般来说,与铝金属化“美好的过去”的金属介电结构相比,低钾实现的细节似乎有更大的变化。一些制造商在其互连堆栈中使用简单的两层介电介质,双大马士革矩阵,而其他制造商则使用复杂的多层单大马士革金属轨道和过孔。Chipworks作为半导体和电子行业竞争情报的供应商,监控芯片工艺进入商业生产的演变。Chipworks从领先的制造商那里获得了零件,并进行了结构分析,以检查设备的特征和制造过程。本文讨论了各种供应商如何使用低k介电体,并对其不同的后端技术进行了比较。本文将详细介绍我们分析的物理结构,并研究使用低k介电材料的不同方法
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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