RADPlace-MS: A Timing-Driven Placer and Optimiser for ASICs Radiation Hardening

C. Georgakidis, S. Simoglou, C. Sotiriou
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Abstract

The manufacturing of modern Integrated Circuits (ICs), resistant against faults caused by ionising radiation, has become quite challenging due to the rapid advancement of VLSI technology. Additionally, the Radiation Hardening process, which involves making electronic cells and circuits resistant to damage or faults induced by ionising radiation, deviates from the conventional design flow. Thus, it generally suffers from insufficient support from industrial EDA tools. RADPlace is an academic timing-driven detailed placement algorithm that ensures spacing constraints among TMR triplet members. However, RADPlace, considering only the top critical paths of the circuit, limits the improvement in circuit timing, especially Total Negative Slack (TNS). In this work, we propose an improved RADPlace version (RADPlace-I) and a Multi-Step RADPlace version (RADPlace-MS), separating timing-driven optimisations from the placement step. Experimental results indicate that RADPlace-I achieves an average 21% improvement in Worst Negative Slack (WNS), while it achieves TNS improvement in most cases. On the other hand, RADPlace-MS achieves an average 54% and 45% improvement in WNS and TNS, respectively, compared to the original RADPlace version, with negligible impact on circuit total area and power.
RADPlace-MS:用于asic辐射硬化的定时驱动砂矿机和优化器
由于VLSI技术的快速发展,现代集成电路(ic)的制造,可以抵抗电离辐射引起的故障,已经变得相当具有挑战性。此外,辐射硬化过程,包括使电子电池和电路抵抗电离辐射引起的损坏或故障,偏离了传统的设计流程。因此,它通常受到工业EDA工具支持不足的困扰。RADPlace是一种时序驱动的详细布局算法,可确保TMR三元组成员之间的间距约束。然而,RADPlace仅考虑电路的顶部关键路径,限制了电路时序的改进,特别是TNS (Total Negative Slack)。在这项工作中,我们提出了一个改进的RADPlace版本(RADPlace- i)和一个多步骤RADPlace版本(RADPlace- ms),将时间驱动的优化与放置步骤分开。实验结果表明,RADPlace-I在最坏负松弛(WNS)情况下平均提高21%,而在大多数情况下达到TNS改善。另一方面,与原始RADPlace版本相比,RADPlace- ms在WNS和TNS方面分别平均提高了54%和45%,而对电路总面积和功耗的影响可以忽略不计。
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