Low noise GaAs-based avalanche photodiodes for long wavelength applications

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367792

B. K. Ng, J. David, W. M. Soong, J. Ng, C. Tan, H. Liu, M. Hopkinson, P. Robson

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Abstract

Currently available avalanche photodiodes (APDs) for use in telecommunication systems operating at 1.3/1.55 /spl mu/m utilize InP and InGaAs as the multiplication and absorption medium respectively. The excess noise performance of the InP avalanching region is relatively poor, and is limited by the hole to electron ionization coefficient ratio (/spl beta///spl alpha/). We have recently reported that Al/sub 0.8/Ga/sub 0.2/As may be a suitable material for the multiplication region in APDs due to its large /spl alpha///spl beta/ ratio in bulk structures (B.K. Ng et al, IEEE Photon. Technol. Lett., vol. 14, p. 522, 2002), which results in a very low avalanche excess noise. In this work, we extend our previous study by investigating the excess noise characteristics in both bulk and sub-micron Al/sub x/Ga/sub 1-x/As diodes as a function of x. Our results here suggest that long wavelength GaAs-based APDs of superior noise characteristics than InP-based APDs can now be realized.

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用于长波长应用的低噪声gaas基雪崩光电二极管

目前可用的雪崩光电二极管(apd)用于工作在1.3/1.55 /spl mu/m的电信系统，分别利用InP和InGaAs作为倍增介质和吸收介质。InP雪崩区的超噪性能相对较差，且受空穴与电子电离系数比值(/spl β ///spl α /)的限制。我们最近报道了Al/sub 0.8/Ga/sub 0.2/As可能是apd中乘法区的合适材料，因为它在体结构中具有较大的/spl α ///spl β /比率(B.K. Ng等，IEEE Photon)。抛光工艺。列托人。， vol. 14, p. 522, 2002)，这导致了非常低的雪崩过量噪声。在这项工作中，我们扩展了之前的研究，研究了块体和亚微米Al/sub x/Ga/sub - 1-x/As二极管的多余噪声特性与x的关系。我们的研究结果表明，现在可以实现比基于inp的apd具有更优越噪声特性的长波gaas apd。

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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