F. Sharov, S. Moxim, P. Lenahan, G. Haase, D. Hughart
{"title":"Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs.","authors":"F. Sharov, S. Moxim, P. Lenahan, G. Haase, D. Hughart","doi":"10.2172/1875033","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":296487,"journal":{"name":"Proposed for presentation at the NSREC 2021 in , .","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proposed for presentation at the NSREC 2021 in , .","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2172/1875033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}