Advances in SiGe HBT BiCMOS technology

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398152

A. Joseph, L. Lanzerotti, X. Liu, D. Sheridan, J. Johnson, Q. Liu, J. Dunn, J. Rieh, D. Harame

引用次数: 13

Abstract

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9-77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with state-of-the-art CMOS and passive elements. We present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

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硅锗(SiGe)异质结双极晶体管(HBT) BiCMOS技术通过为无数产品提供具有成本竞争力的解决方案，在通信市场建立了强大的立足点。SiGe BiCMOS技术目前适用于0.9-77 GHz的各种应用。这一成功的核心是高性能SiGe HBT与最先进的CMOS和无源元件的轻松集成。我们介绍了SiGe BiCMOS技术的进展，并展望了未来的挑战和机遇。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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